MANUFACTURING OF ZNO SEMICONDUCTORS
FROM THE ZN(CH3COO)2•2H2O PRECURSOR
VIA A POLYOL-MEDIATED THERMOLYSIS
PROCESS
FABRICACIÓN DE SEMICONDUCTORES DE ZNO A PARTIR
DEL PRECURSOR ZN(CH3COO)2-2H2O MEDIANTE UN
PROCESO DE TERMÓLISIS MEDIADO POR POLIOL
Gregorio Flores-Carrasco
Technological University of Tecamachalco
Jorge Rodrigo Mora
CINVESTAV-IPN, Solid State Electronics Section 07360 México-México
Carlos Bueno
National Technological of Mexico/IT of Apizaco 90491 Tlaxcala-México
Raquel Ramírez Amador
National Technological of Mexico/IT of Apizaco 90491 Tlaxcala-México
Beatriz Huerta-Flores
National Technological of Mexico/IT of Puebla
María Luisa Juárez Hernández
Technological University of Tecamachalco
pág. 9841
DOI: https://doi.org/10.37811/cl_rcm.v8i6.15836
Manufacturing of ZnO semiconductors from the Zn(CH3COO)2•2H2O
precursor via a Polyol-Mediated Thermolysis Process
Gregorio Flores-Carrasco1
flcagr@hotmail.com
https://orcid.org/0000-0002-0204-0589
Technological University of Tecamachalco
75483 Tecamachalco-Puebla-México
Raquel Ramírez Amador
raquel.ra@apizaco.tecnm.mx
https://orcid.org/0000-0003-0716-4596
National Technological of Mexico/IT of Apizaco
90491 Tlaxcala-México
Jorge Rodrigo Mora
rodrigomora17@gmail.com
https://orcid.org/0000-0002-3031-8365
CINVESTAV-IPN, Solid State Electronics
Section 07360 México-México
Beatriz Huerta-Flores
beatriz.huerta@puebla.tecnm.mx
https://orcid.org/0009-0001-9510-1503
National Technological of Mexico/IT of Puebla
72220 Puebla-México
Carlos Bueno
carlos.ba@apizaco.tecnm.mx
https://orcid.org/0000-0003-3203-5884
National Technological of Mexico/IT of Apizaco
90491 Tlaxcala-México
María Luisa Juárez Hernández
rectoria@uttecam.edu.mx
https://orcid.org/0000-0001-9735-0186
Technological University of Tecamachalco
75483 Tecamachalco-Puebla-México
ABSTRACT
In this work, the instrumentation of a system to manufacture ZnO semiconductors using the Polyol-
Mediated Thermolysis Process are reported. The semiconductors manufactured from the
Zn(CH3COO)2•2H2O precursor have been synthesized in different molar concentrations (0.001 M, 0.01 M,
and 0.1 M), at low temperatures and atmospheric pressure. The structural and morphological characteristics
of the ZnO semiconductors were studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy
(SEM). XRD has been confirmed the manufacturing of the ZnO semiconductors with high crystalline
quality. No other crystalline phases were detected. The SEM micrographs reveal that the morphology of
the non-agglomerated quasi-spherical particles (composed of nanometer-sized particles) has been
controlled from the agglomerated particles, when the concentration of 0.001 M to 0.01 M is used,
respectively. When the highest concentration has been used, no aggregation occurs and only tiny particles
in the nanosized range are obtained. As a result, the synthesis route successfully demonstrates the
manufacturing of semiconductors in a single step, in a simple-strategy process, being of low cost and
scalable to industrial level.
Keywords: polyol-mediated thermolysis process, scalable zno production, structural and morphological
characterization
1 Autor principal.
Correspondencia: flcagr@hotmail.com
DOI: https://doi.org/10.37811/cl_rcm.v8i6.15836
Manufacturing of ZnO semiconductors from the Zn(CH3COO)2•2H2O
precursor via a Polyol-Mediated Thermolysis Process
Gregorio Flores-Carrasco1
flcagr@hotmail.com
https://orcid.org/0000-0002-0204-0589
Technological University of Tecamachalco
75483 Tecamachalco-Puebla-México
Raquel Ramírez Amador
raquel.ra@apizaco.tecnm.mx
https://orcid.org/0000-0003-0716-4596
National Technological of Mexico/IT of Apizaco
90491 Tlaxcala-México
Jorge Rodrigo Mora
rodrigomora17@gmail.com
https://orcid.org/0000-0002-3031-8365
CINVESTAV-IPN, Solid State Electronics
Section 07360 México-México
Beatriz Huerta-Flores
beatriz.huerta@puebla.tecnm.mx
https://orcid.org/0009-0001-9510-1503
National Technological of Mexico/IT of Puebla
72220 Puebla-México
Carlos Bueno
carlos.ba@apizaco.tecnm.mx
https://orcid.org/0000-0003-3203-5884
National Technological of Mexico/IT of Apizaco
90491 Tlaxcala-México
María Luisa Juárez Hernández
rectoria@uttecam.edu.mx
https://orcid.org/0000-0001-9735-0186
Technological University of Tecamachalco
75483 Tecamachalco-Puebla-México
ABSTRACT
In this work, the instrumentation of a system to manufacture ZnO semiconductors using the Polyol-
Mediated Thermolysis Process are reported. The semiconductors manufactured from the
Zn(CH3COO)2•2H2O precursor have been synthesized in different molar concentrations (0.001 M, 0.01 M,
and 0.1 M), at low temperatures and atmospheric pressure. The structural and morphological characteristics
of the ZnO semiconductors were studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy
(SEM). XRD has been confirmed the manufacturing of the ZnO semiconductors with high crystalline
quality. No other crystalline phases were detected. The SEM micrographs reveal that the morphology of
the non-agglomerated quasi-spherical particles (composed of nanometer-sized particles) has been
controlled from the agglomerated particles, when the concentration of 0.001 M to 0.01 M is used,
respectively. When the highest concentration has been used, no aggregation occurs and only tiny particles
in the nanosized range are obtained. As a result, the synthesis route successfully demonstrates the
manufacturing of semiconductors in a single step, in a simple-strategy process, being of low cost and
scalable to industrial level.
Keywords: polyol-mediated thermolysis process, scalable zno production, structural and morphological
characterization
1 Autor principal.
Correspondencia: flcagr@hotmail.com
pág. 9842
Fabricación de semiconductores de ZnO a partir del precursor
Zn(CH3COO)2-2H2O mediante un proceso de termólisis mediado por poliol
RESUMEN
En este trabajo se presenta la instrumentación de un sistema de fabricación de semiconductores de ZnO
mediante el proceso de termólisis mediada por poliol. Los semiconductores fabricados a partir del precursor
Zn(CH3COO)2-2H2O se han sintetizado en diferentes concentraciones molares (0.001 M, 0.01 M, y 0.1
M), a bajas temperaturas y presión atmosférica. Las características estructurales y morfológicas de los
semiconductores de ZnO se estudiaron mediante difracción de rayos X (DRX) y microscopía electrónica
de barrido (SEM). La DRX ha confirmado la fabricación de los semiconductores de ZnO con alta calidad
cristalina. No se detectaron otras fases cristalinas. Las micrografías SEM revelan que la morfología de las
partículas cuasi esféricas no aglomeradas (compuestas de partículas de tamaño nanométrico) se ha
controlado a partir de las partículas aglomeradas, cuando se ha utilizado la concentración de 0,001 M a 0,01
M, respectivamente. Cuando se ha utilizado la concentración más alta, no se produce agregación y sólo se
obtienen partículas diminutas en el rango de tamaño nanométrico. Como resultado, la ruta de síntesis
demuestra con éxito la fabricación de semiconductores en un solo paso, en un proceso de estrategia simple,
siendo de bajo coste y escalable a nivel industrial.
Palabras clave: proceso de termólisis mediado por poliol, producción escalable de zno, caracterización
estructural y morfológica
Artículo recibido 13 enero 2025
Aceptado para publicación: 19 febrero 2025
Fabricación de semiconductores de ZnO a partir del precursor
Zn(CH3COO)2-2H2O mediante un proceso de termólisis mediado por poliol
RESUMEN
En este trabajo se presenta la instrumentación de un sistema de fabricación de semiconductores de ZnO
mediante el proceso de termólisis mediada por poliol. Los semiconductores fabricados a partir del precursor
Zn(CH3COO)2-2H2O se han sintetizado en diferentes concentraciones molares (0.001 M, 0.01 M, y 0.1
M), a bajas temperaturas y presión atmosférica. Las características estructurales y morfológicas de los
semiconductores de ZnO se estudiaron mediante difracción de rayos X (DRX) y microscopía electrónica
de barrido (SEM). La DRX ha confirmado la fabricación de los semiconductores de ZnO con alta calidad
cristalina. No se detectaron otras fases cristalinas. Las micrografías SEM revelan que la morfología de las
partículas cuasi esféricas no aglomeradas (compuestas de partículas de tamaño nanométrico) se ha
controlado a partir de las partículas aglomeradas, cuando se ha utilizado la concentración de 0,001 M a 0,01
M, respectivamente. Cuando se ha utilizado la concentración más alta, no se produce agregación y sólo se
obtienen partículas diminutas en el rango de tamaño nanométrico. Como resultado, la ruta de síntesis
demuestra con éxito la fabricación de semiconductores en un solo paso, en un proceso de estrategia simple,
siendo de bajo coste y escalable a nivel industrial.
Palabras clave: proceso de termólisis mediado por poliol, producción escalable de zno, caracterización
estructural y morfológica
Artículo recibido 13 enero 2025
Aceptado para publicación: 19 febrero 2025
pág. 9843
INTRODUCTION
Zinc Oxide (ZnO) is a II-VI type-N semiconductor compound with a band gap around 3.37 eV and a
wurtzite-type crystalline structure as a stable phase at room temperature. It has specific optical, electrical
and thermal properties that are very important for a wide range of applications, especially in the field of the
electronic and optoelectronic. However, currently the interest main focus, both scientific and technological,
has been directed towards obtaining nanostructured materials due to the superior properties they show
compared to bulk materials, promoting the development of various techniques that allow the obtaining of
ultrafine particles (Ramos-Justicia, et al., 2023).
Due to the different properties and potential applications of ZnO, the renewed interest in nanostructured
ZnO particles has been driven by their attractive and improved properties (electrical, optical, magnetic and
mechanical), for applications including nanolasers, ferromagnetic semiconductor nanomaterials,
piezoelectric semiconductors, among other (Ramos-Justicia, et al., 2023; Salvador Alcántara, et al., 2008).
Recently, the physical and chemical properties of nanostructured ZnO also make it very attractive for
wastewater treatment, attracting considerable attention due to its photocatalytic property for the degradation
of various environmental pollutants (Flores‐Carrasco et al., 2014; Muñoz-Fernandez et al., 2017; Flores‐
Carrasco et al., 2021, ).
The results discussed above suggest that there are still several problems to be solved for devices based on
ZnO nano- and microstructures to reach optimal efficiencies and be truly competitive within the
technological market. Among the fundamental problems is the control of the morphological and structural
properties of the ZnO nano- and microstructures in relation to their manufacturing process. Therefore, the
great technological interest aroused by the ZnO and the existence of points open to study and improvement
in its manufacturing processes, have been driven the development and interest in the generation of different
synthesis methodologies. Up till now, the synthesis methods such as: spray pyrolysis (Salvador Alcántara,
et al., 2008; Flores‐Carrasco et al., 2014), hydrothermal (Sierra-Fernandez et al., 2014), solvothermal
(Muñoz-Fernandez et al., 2017), vapor-solid (Bueno et al., 2018, Bueno et al., 2024), thermal treatment
(Mora, et al., 2019), chemical bath deposition (Flores‐Carrasco et al., 2021), and many others, the main
need is the development of a simple process which allows controlling the characteristics of the particles
including the control of size, morphology and chemical composition, in a reproducible way, being of low
INTRODUCTION
Zinc Oxide (ZnO) is a II-VI type-N semiconductor compound with a band gap around 3.37 eV and a
wurtzite-type crystalline structure as a stable phase at room temperature. It has specific optical, electrical
and thermal properties that are very important for a wide range of applications, especially in the field of the
electronic and optoelectronic. However, currently the interest main focus, both scientific and technological,
has been directed towards obtaining nanostructured materials due to the superior properties they show
compared to bulk materials, promoting the development of various techniques that allow the obtaining of
ultrafine particles (Ramos-Justicia, et al., 2023).
Due to the different properties and potential applications of ZnO, the renewed interest in nanostructured
ZnO particles has been driven by their attractive and improved properties (electrical, optical, magnetic and
mechanical), for applications including nanolasers, ferromagnetic semiconductor nanomaterials,
piezoelectric semiconductors, among other (Ramos-Justicia, et al., 2023; Salvador Alcántara, et al., 2008).
Recently, the physical and chemical properties of nanostructured ZnO also make it very attractive for
wastewater treatment, attracting considerable attention due to its photocatalytic property for the degradation
of various environmental pollutants (Flores‐Carrasco et al., 2014; Muñoz-Fernandez et al., 2017; Flores‐
Carrasco et al., 2021, ).
The results discussed above suggest that there are still several problems to be solved for devices based on
ZnO nano- and microstructures to reach optimal efficiencies and be truly competitive within the
technological market. Among the fundamental problems is the control of the morphological and structural
properties of the ZnO nano- and microstructures in relation to their manufacturing process. Therefore, the
great technological interest aroused by the ZnO and the existence of points open to study and improvement
in its manufacturing processes, have been driven the development and interest in the generation of different
synthesis methodologies. Up till now, the synthesis methods such as: spray pyrolysis (Salvador Alcántara,
et al., 2008; Flores‐Carrasco et al., 2014), hydrothermal (Sierra-Fernandez et al., 2014), solvothermal
(Muñoz-Fernandez et al., 2017), vapor-solid (Bueno et al., 2018, Bueno et al., 2024), thermal treatment
(Mora, et al., 2019), chemical bath deposition (Flores‐Carrasco et al., 2021), and many others, the main
need is the development of a simple process which allows controlling the characteristics of the particles
including the control of size, morphology and chemical composition, in a reproducible way, being of low
pág. 9844
industrial cost, continuous operation and high performance. Taking the above into account, the method that
has managed to achieve these expectations to manufacture functional semiconductors with specific
properties, suitable for new applications, has been the Polyol method (Martínez-Martínez et al., 2021;
Flores‐Carrasco et al., 2021).
Due to the approaches already presented, in this work were report the instrumentation of a system for the
ZnO semiconductors manufacture by a Polyol-Mediated Thermolysis Process. Likewise, a systematic study
of the experimental parameters has been carried out during the manufacturing process of the ZnO
semiconductors, without forgetting the academic challenge of addressing manufacturing aimed at obtaining
nanostructured semiconductor materials, due to the superior properties that these show, as well as contribute
to a greater understanding of the influence of the configuration in the technique used on the morphological
and structural characteristics of the ZnO semiconductors obtained.
METHODOLOGY
Manufacturing synthesis. As a first step, the stoichiometric amount of Zn(CH3COO)2•2H2O and
Polyvinylpyrrolidone (PVP) was dissolved in Ethylene Glycol (EG) in a three-necked flask fitted with a
reflux condenser. Figure 1A shows the block diagram of the complete system of the Polyol-Mediated
Thermolysis Process, employing for the ZnO semiconductors manufacture. Subsequently, the reaction
solution thus obtained was stirred vigorously and then heated to a temperature of 185 °C. The reaction
continued for 2 hours, after which the system was cooled to room temperature. The particles thus obtained
were separated from the liquid by centrifugation and then washed repeatedly with deionized water. Finally,
the particles were dried into a furnace out at 500 °C in an air atmosphere for 2 hours, and then a white
powder sample of the zinc oxide precursor was collected.
Characterization techniques. X-Ray Diffraction (XRD) analysis was used to investigate the crystalline
phase and structure of all the as-synthesized samples. These measurements have been performed on an X-
Ray Diffractometer (Philips X´pert) with CuKα radiation (λ = 1.5406 Å) and over ther ange 2θ = 25-50° at
room temperature. To study the morphology of all the as-synthesized samples, Scanning Electron
Microscopy (SEM, FEI Teneo / EDAX-Dx4) analyses has been carried out employing an accelerating
voltage of 5 kV.
industrial cost, continuous operation and high performance. Taking the above into account, the method that
has managed to achieve these expectations to manufacture functional semiconductors with specific
properties, suitable for new applications, has been the Polyol method (Martínez-Martínez et al., 2021;
Flores‐Carrasco et al., 2021).
Due to the approaches already presented, in this work were report the instrumentation of a system for the
ZnO semiconductors manufacture by a Polyol-Mediated Thermolysis Process. Likewise, a systematic study
of the experimental parameters has been carried out during the manufacturing process of the ZnO
semiconductors, without forgetting the academic challenge of addressing manufacturing aimed at obtaining
nanostructured semiconductor materials, due to the superior properties that these show, as well as contribute
to a greater understanding of the influence of the configuration in the technique used on the morphological
and structural characteristics of the ZnO semiconductors obtained.
METHODOLOGY
Manufacturing synthesis. As a first step, the stoichiometric amount of Zn(CH3COO)2•2H2O and
Polyvinylpyrrolidone (PVP) was dissolved in Ethylene Glycol (EG) in a three-necked flask fitted with a
reflux condenser. Figure 1A shows the block diagram of the complete system of the Polyol-Mediated
Thermolysis Process, employing for the ZnO semiconductors manufacture. Subsequently, the reaction
solution thus obtained was stirred vigorously and then heated to a temperature of 185 °C. The reaction
continued for 2 hours, after which the system was cooled to room temperature. The particles thus obtained
were separated from the liquid by centrifugation and then washed repeatedly with deionized water. Finally,
the particles were dried into a furnace out at 500 °C in an air atmosphere for 2 hours, and then a white
powder sample of the zinc oxide precursor was collected.
Characterization techniques. X-Ray Diffraction (XRD) analysis was used to investigate the crystalline
phase and structure of all the as-synthesized samples. These measurements have been performed on an X-
Ray Diffractometer (Philips X´pert) with CuKα radiation (λ = 1.5406 Å) and over ther ange 2θ = 25-50° at
room temperature. To study the morphology of all the as-synthesized samples, Scanning Electron
Microscopy (SEM, FEI Teneo / EDAX-Dx4) analyses has been carried out employing an accelerating
voltage of 5 kV.
pág. 9845
RESULTS AND DISCUSSION
Figure 1B shows the XRD patterns of all the ZnO semiconductors manufacture, from the different
concentration in the (0.001 M, 0.01 M, and 0.1 M) precursor solution. These patterns present the typical
diffraction peaks that were assigned to the (1 0 0), (0 0 2), (1 0 1), and (1 0 2) planes of the ZnO structure
(JCPDS data card no. 80-0075). Furthermore, the typical hexagonal (wurtzite) structure of all the ZnO
semiconductors manufacture samples has been inferred from the XRD pattern, which is in good agreement
with the intrinsic fundamental structure of ZnO as reported in the literature (Ramos-Justicia, et al., 2023;
Flores‐Carrasco et al., 2021, Bueno et al., 2024). No other crystalline phase was detected. Additional, it has
been found that the intensity of the all peaks improvement with the increase in the concentration of the
precursor solution, indicating that the crystalline quality also improved. Has been observed, also, that the
Full Width Half-Maximum (FWHM) of the peaks became wider when increase the concentration of the
precursor solution, indicating that the decreases particles sizes.
From the SEM micrographs shown in Figure 1C, has been study the morphology of all the ZnO
semiconductor samples, independently of the initial reagent concentration used in each experiment. In
Figure 1C(a), can be only observed in the SEM micrographs quasi-spherical particles agglomerated when
the precursor a lower concentration has been used. In the case of 0.01 M concentration (Figure 1(b)), the
SEM micrographs clearly revealed quasi-spherical, non-glomerated particles with a good size distribution,
composed for subunits of nanometer-sized particles. When has been employing concentration of 0.1 M
(Figure 1C(c)), it is possible to distinguish only the formation of monodisperse and dense particles with a
nanometer-sized.
RESULTS AND DISCUSSION
Figure 1B shows the XRD patterns of all the ZnO semiconductors manufacture, from the different
concentration in the (0.001 M, 0.01 M, and 0.1 M) precursor solution. These patterns present the typical
diffraction peaks that were assigned to the (1 0 0), (0 0 2), (1 0 1), and (1 0 2) planes of the ZnO structure
(JCPDS data card no. 80-0075). Furthermore, the typical hexagonal (wurtzite) structure of all the ZnO
semiconductors manufacture samples has been inferred from the XRD pattern, which is in good agreement
with the intrinsic fundamental structure of ZnO as reported in the literature (Ramos-Justicia, et al., 2023;
Flores‐Carrasco et al., 2021, Bueno et al., 2024). No other crystalline phase was detected. Additional, it has
been found that the intensity of the all peaks improvement with the increase in the concentration of the
precursor solution, indicating that the crystalline quality also improved. Has been observed, also, that the
Full Width Half-Maximum (FWHM) of the peaks became wider when increase the concentration of the
precursor solution, indicating that the decreases particles sizes.
From the SEM micrographs shown in Figure 1C, has been study the morphology of all the ZnO
semiconductor samples, independently of the initial reagent concentration used in each experiment. In
Figure 1C(a), can be only observed in the SEM micrographs quasi-spherical particles agglomerated when
the precursor a lower concentration has been used. In the case of 0.01 M concentration (Figure 1(b)), the
SEM micrographs clearly revealed quasi-spherical, non-glomerated particles with a good size distribution,
composed for subunits of nanometer-sized particles. When has been employing concentration of 0.1 M
(Figure 1C(c)), it is possible to distinguish only the formation of monodisperse and dense particles with a
nanometer-sized.
pág. 9846
Figure 1: A) Schematic illustration of preparing for ZnO semiconductors. B) X-ray diffractograms of ZnO
semiconductors manufactured in different concentration of precursor solution. C) SEM images of typical
ZnO semiconductors.
CONCLUSIONS
XRD has been confirmed that all the manufactured semiconductors present the intrinsic fundamental
structure of ZnO. The SEM images revealed that using the highest precursor concentration, the aggregation
process does not occur and it is possible to obtain particles in the nanometric range.
Finally, the instrumented system by a Polyol-Mediated Thermolysis Process has been shown to successfully
produce ZnO semiconductors in an efficient and reproducible form. What is evident from these findings is
that the morphology and the particle size has been controlled, to help promote the large-scale production
of these nanomaterials given their properties to allow various applications in subsequent studies.
ACKNOWLEDGEMENTS
This research was supported by the projects UTTECAM (Technological University of Tecamachalco),
TecNM (National Technological of Mexico), and CONAHCYT (National Council of Humanities, Sciences,
Figure 1: A) Schematic illustration of preparing for ZnO semiconductors. B) X-ray diffractograms of ZnO
semiconductors manufactured in different concentration of precursor solution. C) SEM images of typical
ZnO semiconductors.
CONCLUSIONS
XRD has been confirmed that all the manufactured semiconductors present the intrinsic fundamental
structure of ZnO. The SEM images revealed that using the highest precursor concentration, the aggregation
process does not occur and it is possible to obtain particles in the nanometric range.
Finally, the instrumented system by a Polyol-Mediated Thermolysis Process has been shown to successfully
produce ZnO semiconductors in an efficient and reproducible form. What is evident from these findings is
that the morphology and the particle size has been controlled, to help promote the large-scale production
of these nanomaterials given their properties to allow various applications in subsequent studies.
ACKNOWLEDGEMENTS
This research was supported by the projects UTTECAM (Technological University of Tecamachalco),
TecNM (National Technological of Mexico), and CONAHCYT (National Council of Humanities, Sciences,
pág. 9847
and Technologies)‐Mexico.
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M.E., Fernández, P. (2023). ZnO-Based Materials: From Pauli’s Nonsense to a Key Enabling
Technology. Photonics, 10, 1106. https://doi.org/10.3390/photonics10101106
Salvador Alcántara, I., Susana Soto, B., Antonio Ortega, L., Cabañas T., R.L., Pérez R., S.J., Flores C., G.
(2008). Películas de ZnO piezoeléctricas depositadas por Spray Pirolisis US. Superficies y Vacío,
21(4), 6-9.
https://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212008000400002
Flores, G., Carrillo, J., Luna, J.A., Martínez, R., Sierra-Fernandez, A., Milosevic, O., Rabanal, M.E. (2014).
Synthesis, characterization and photocatalytic properties of nanostructured ZnO particles obtained
by low temperature air-assisted-USP. Advanced Powder Technology, 25, 1435-1441.
http://dx.doi.org/10.1016/j.apt.2014.02.004
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Solvothermal synthesis of Ag/ZnO micro/nanostructures with different precursors for advanced
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Nanoparticles with Controllable Ce Content for Efficient Photocatalytic Degradation of MB
Synthesized by the Polyol Method. Catalysts, 11, 71. https://doi.org/10.3390/catal11010071
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Maldonado, R. (2024). Structural, Morphological, and Optical Properties of Nano- and Micro-
Structures of ZnO Obtained by the Vapor–Solid Method at Atmospheric Pressure and
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Bueno, C., Maestre, D., Díaz, T., Pacio, M., Cremades, A. (2018). Fabrication of ZnO-TiO2 axial micro-
and Technologies)‐Mexico.
BIBLIOGRAPHIC REFERENCES
Ramos-Justicia, J.F., Ferreiro, A., Flores-Carrasco, G., Rodríguez-Cañamero, S., Urbieta, A., Rabanal,
M.E., Fernández, P. (2023). ZnO-Based Materials: From Pauli’s Nonsense to a Key Enabling
Technology. Photonics, 10, 1106. https://doi.org/10.3390/photonics10101106
Salvador Alcántara, I., Susana Soto, B., Antonio Ortega, L., Cabañas T., R.L., Pérez R., S.J., Flores C., G.
(2008). Películas de ZnO piezoeléctricas depositadas por Spray Pirolisis US. Superficies y Vacío,
21(4), 6-9.
https://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212008000400002
Flores, G., Carrillo, J., Luna, J.A., Martínez, R., Sierra-Fernandez, A., Milosevic, O., Rabanal, M.E. (2014).
Synthesis, characterization and photocatalytic properties of nanostructured ZnO particles obtained
by low temperature air-assisted-USP. Advanced Powder Technology, 25, 1435-1441.
http://dx.doi.org/10.1016/j.apt.2014.02.004
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